- Title
- Doping and defect engineering induced extremely high magnetization and large coercivity in Co doped MoTe₂
- Creator
- Ahmed, S.; Cui, X. Y.; Murmu, Peter P.; Ding, X.; Chu, X. Z.; Sathish, C. I.; Bao, N. N.; Liu, R.; Zhao, W. Y.; Kennedy, J.; Tan, T.; Peng, M.; Wang, L.; Ding, J.; Wu, Tom; Wang, X. L.; Li, S.; Vinu, A.; Ringer, S. R.; Yi, J. B.
- Relation
- Journal of Alloys and Compounds Vol. 918, no. 165750
- Publisher Link
- http://dx.doi.org/10.1016/j.jallcom.2022.165750
- Publisher
- Elsevier
- Resource Type
- journal article
- Date
- 2022
- Description
- Magnetism in layered two dimensional materials has attracted extensive interest. In this work, a variety of concentrations of Co dopants (1, 2 and 4 at.%) were doped into MoTe₂ single crystal by ion implantation. Magnetic results indicate that pure MoTe₂ displays a diamagnetic behavior. A small amount of Co doping induces a very high saturation magnetization. 4 % Co doping exhibits a saturation magnetization as high as 2231 emu/cm³, higher than pure metallic Fe (1958 emu/cm³). In addition, an outsized coercivity of 11 kOe was also detected in the 2 at.% Co doped MoTe₂ sample, which may be a consequence of doping-induced defects in the lattice structure, stress, anisotropic geometry of Co-Te ions and pinning effects by the defects in-between the ions. First principles density functional theory calculations reveal that doping-induced structural defects, including substitutional and interstitial Co, nanoholes as well as interstitial Mo, are responsible for the high magnetization.
- Subject
- transition metal dichalcogenides (TMDCs); ion Implantation; ferromagnetism; diluted magnetic semiconductor (DMS)
- Identifier
- http://hdl.handle.net/1959.13/1482497
- Identifier
- uon:50948
- Identifier
- ISSN:0925-8388
- Language
- eng
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